China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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IRFHM3911TRPBF Common Power Mosfet High Performance Low On Resistance

IRFHM3911TRPBF Common Power Mosfet High Performance Low On Resistance

Brand Name Infineon Technologies
Model Number IRFHM3911TRPBF
Place of Origin Multi-origin
Minimum Order Quantity 1
Price Negotiable
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 999999
Delivery Time 1-7days
Packaging Details Standard
Product Type MOSFET Power Electronics
Manufacturer Infineon Technologies
Manufacturer Product Number IRFHM3911TRPBF
Description MOSFET N-CH 100V 3.2A/20A 8PQFN
Manufacturer Standard Lead Time 1-7days
Detailed Description N-Channel 100 V 3.2A (Ta), 20A (Tc) 2.8W (Ta), 29W (Tc) Surface Mount 8-PQFN (3x3)
Detailed Product Description

Product Listing:

 

IRFHM3911TRPBF MOSFET Power Electronics

 

This advanced MOSFET power electronic device is designed to handle high-power applications and provide high levels of reliability and performance. It features N-channel MOSFET technology, with a maximum voltage rating of 100V and a maximum drain current of 30A. It has an on-resistance of 0.0022Ω and a fast switching speed of 5.8ns. This device has a low gate charge of 4.1nC and a low RDS(on) of 0.0022Ω, allowing it to provide efficient power switching and reduced power consumption. It is RoHS compliant and has a lead free finish.

 

Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
115mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id
4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 29W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
8-PQFN (3x3)
Package / Case
Base Product Number

 

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