Common Power Mosfet BSC061N08NS5ATMA1 High Performance N-Channel MOSFETs

Product Listing:

BSC061N08NS5ATMA1 MOSFET Power Electronics

Features:

• Low RDS(on)
• Low Qg
• Low gate charge
• High current handling capability
• Low capacitance
• RoHS compliant
• AEC-Q101 qualified

Package:

SOT-227

Absolute Maximum Ratings:

• Drain-source voltage (Vds): 600V
• Drain current (Id): 61A
• Gate-source voltage (Vgs): ±20V
• Power dissipation: 251W
• Operating temperature (Tj): -55℃ to +175℃
• Storage temperature (Tstg): -55℃ to +175℃

Electrical Characteristics:

• Drain-source Breakdown Voltage (Vds): 600V
• Static Drain-source On-state Resistance (Rds): 0.0065Ω
• Gate-source Leakage Current (Igs): ±0.3mA
• Gate-source Threshold Voltage (Vgs): 4V
• Gate Charge (Qg): 8.4nC

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