IRF630NPBF Power Mosfet High Power And High Efficiency RoHS Compliant

Product Listing:

IRF630NPBF MOSFET Power Electronics

Description:

The IRF630NPBF MOSFET Power Electronics from Infineon Technologies is a N-channel enhancement-mode power MOSFET designed for use in low-voltage power applications. This device offers excellent switching performance with low gate and drain-source charge, and low on-state resistance. It has a maximum drain-source breakdown voltage of 100V, a maximum drain current of 5A and a maximum power dissipation of 6W. This device is also RoHS compliant and is suitable for use in numerous commercial applications.

Features:

- N-channel enhancement-mode power MOSFET
- Maximum drain-source breakdown voltage: 100V
- Maximum drain current: 5A
- Maximum power dissipation: 6W
- Low gate and drain-source charge
- Low on-state resistance
- RoHS compliant
- Suitable for use in numerous commercial applications

Package: TO-220AB

Manufacturer: Infineon Technologies

Order Code: IRF630NPBF

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