Mosfet In Power Electronics IPB17N25S3100ATMA1 High Performance Switching Device

Product Listing:

IPB17N25S3100ATMA1 - N-Channel Enhancement Mode Field Effect Transistor

Specifications:

• Drain-Source Voltage (Vdss) : 100V
• Gate-Source Voltage (Vgss) : ± 20V
• Power Dissipation (Pd) : 4.3W
• Rds(on) : 0.087Ω
• Drain-Source On-State Resistance (Rdson) : 0.087Ω
• Operating Temperature Range : -55°C to 175°C
• Maximum Junction Temperature (Tj) : 175°C
• Mounting Style : SMD/SMT
• Package/Case : TO-252-3, DPak (2+Tab)
• Transistor Polarity : N-Channel
• Maximum Continuous Drain Current (Id) : 17A
• Transistor Type : MOSFET Power Electronics

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