IPP045N10N3GXKSA1 MOSFET Power Electronics NChannel MOSFET For Switching Applications
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IPP045N10N3GXKSA1 MOSFET Power Electronics NChannel MOSFET for Switching Applications
Description:
The IPP045N10N3GXKSA1 MOSFET is designed for high speed switching applications. It is an N-Channel enhancement mode MOSFET with an avalanche energy rated of 70mJ, a drain current rating of 45A, a drain-source on-state resistance of 0.010 Ohm, and a gate charge rating of 31nC. It also has a threshold voltage of 2.0V and a total gate charge of 46nC.
In addition, it features a maximum drain-source voltage of 45V, a maximum drain-source on-state resistance of 0.013 Ohm, and a maximum gate-source voltage of 20V. The MOSFET is housed in a PowerPAK SO-8N package, which is RoHS compliant.This is an N-channel MOSFET with a maximum drain-source voltage of 100V. It has an RDS(on) of 0.45Ω and an ID of 45A. It is ideal for high-speed switching applications.
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