IRF630NSTRLPBF MOSFET Power Electronics High Efficiency Low On Resistance

IRF630NSTRLPBF MOSFET Power Electronics High Efficiency Low On Resistance

This product is an N-channel enhancement mode silicon gate MOSFET (metal-oxide-semiconductor field-effect transistor) from International Rectifier Corporation. It is optimized for low voltage, high speed switching applications. This MOSFET is housed in a TO-220AB package.

Features:

• Low RDS(on)
• Low gate charge
• Low input and output capacitance
• Avalanche energy rated
• Low threshold drive
• Ease of paralleling

Specifications:

• Drain-Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 13A
• Drain-Source On-Resistance (Rds(on)): 0.45Ω
• Gate-Source Voltage (Vgs): ±20V
• Gate Threshold Voltage (Vgs(th)): 4V
• Power Dissipation (Pd): 56W
• Operating Temperature (Tj): –55°C to 150°C

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