IRFU220NPBF MOSFET Power Electronics High Performance Low On-Resistance Low Gate Charge

IRFU220NPBF MOSFET Power Electronics High Performance Low On-Resistance Low Gate Charge

Features:

• N-Channel
• Logic Level Gate
• Low On-Resistance
• Fast Switching Capability
• Low Gate Threshold Voltage
• High Input Impedance
• Low Input Capacitance
• High Gain Bandwidth Product
• RoHS Compliant

Packaging: TO-220AB

Configuration: Single

Drain-Source Voltage (VDS): 200V

Gate-Source Voltage (VGS): ±20V

Drain Current (ID): 25A

Continuous Drain Current (ID): -25A

Drain-Source On-State Resistance (RDS(ON)): 0.065Ω

Maximum Gate-Source Voltage (VGS): ±20V

Power Dissipation (PD): 30W

Operating Temperature Range: -55°C to +150°C

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