FQA70N10 MOSFET Power Electronics TO-3PN Package N-Channel 100V enhancement mode
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FQA70N10 MOSFET Power Electronics TO-3PN Package N-Channel 100V enhancement mode
Features
• 70 A, 100 V, RDS(on) = 23 mΩ (Max) @VGS = 10 V, ID = 35 A • Low Gate Charge (Typ. 85 nC) • Low Crss (Typ. 150 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications
Industrial Motor Drive
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