China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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FDN5630 MOSFET Power Electronics N-Channel POWERTRENCH 60 V Low Gate Charge

FDN5630 MOSFET Power Electronics N-Channel POWERTRENCH 60 V Low Gate Charge

Brand Name onsemi
Model Number FDN5630
Place of Origin original
Minimum Order Quantity 1
Price Negotiable
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 999999
Delivery Time 1-3 days
Packaging Details standard
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Detailed Product Description

Single P-Channel (1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (1.5 V) Specified PowerTrench® MOSFETFDN5630  MOSFET Power Electronics  N-Channel  POWERTRENCH 60 V Low Gate Charge
20 V, –0.83 A, 0.5 Ω
20 V, –0.83 A, 0.5 ΩSingle P-Channel (1.5 V) Specified PowerTrench® MOSFET
20 V, –0.83 A, 0.5

 

Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3
Package / Case
 
 
General Description
This N−Channel MOSFET has been designed specificallyto improve the overall efficiency of dc−dc converters using either synchronous or conventional switching PWM controllers.

This MOSFET features very low RDS(on) in a small SOT23 footprint. onsemi’s POWERTRENCH technology provides faster switching than other MOSFETs with comparable RDS(on) specifications. The result is higher overall efficiency with less board space.

Features
 −1.7 A, 60 V
 RDS(on) = 0.100 @ VGS = 10 V
 RDS(on) = 0.120 @ VGS = 6 V
 Optimized for Use in High Frequency DC−DC Converters
 Low Gate Charge
 Very Fast Switching
 SUPERSOT−3 Provides Low RDS(on) in SOT23 Footprint
 This Device is Pb−Free and Halogen Free

Applications
 DC−DC Converters
 Motor Drives

 

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