FDN5630 MOSFET Power Electronics N-Channel POWERTRENCH 60 V Low Gate Charge
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Detailed Product Description
Single P-Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFETFDN5630 MOSFET Power Electronics N-Channel POWERTRENCH
60 V Low Gate Charge
General Description This N−Channel MOSFET has been designed specificallyto improve the overall efficiency of dc−dc converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(on) in a small SOT23 footprint. onsemi’s POWERTRENCH technology provides faster switching than other MOSFETs with comparable RDS(on) specifications. The result is higher overall efficiency with less board space. Features −1.7 A, 60 V RDS(on) = 0.100 @ VGS = 10 V RDS(on) = 0.120 @ VGS = 6 V Optimized for Use in High Frequency DC−DC Converters Low Gate Charge Very Fast Switching SUPERSOT−3 Provides Low RDS(on) in SOT23 Footprint This Device is Pb−Free and Halogen Free Applications DC−DC Converters Motor Drives
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