FQD7P20TM Power MOSFET - High Performance Low RDS(On) For Maximum Efficiency

FQD7P20TM MOSFET Power Electronics

Product Overview:

The FQD7P20TM is a state-of-the-art MOSFET power electronics device designed to provide superior performance in a wide range of applications. This device is designed to meet the demands of high power applications, offering low on-resistance, high current capability, and low gate charge. It features advanced processing technology and is capable of delivering power over a wide range of voltages and temperatures.

Features:

• Low on-resistance
• High current capability
• Low gate charge
• Advanced processing technology
• Wide voltage range
• Wide temperature range
• Excellent thermal performance

Specifications:

• Drain-Source Voltage: 20V
• Drain Current (Continuous): 97A
• Drain Current (Pulsed): 146A
• RDS(on): 0.0035Ω
• Gate-Source Voltage: ±12V
• Operating Temperature: -55°C to 175°C
• Package Type: TO-220AB
• Maximum Power Dissipation: 87.2W

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