China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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FDP045N10A-F102 MOSFET Power Electronics TO-220-3 High Current Applications N-Channel

FDP045N10A-F102 MOSFET Power Electronics TO-220-3 High Current Applications N-Channel

Brand Name onsemi
Model Number FDP045N10A-F102
Place of Origin original
Minimum Order Quantity 1
Price Negotiable
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 999999
Delivery Time 1 - 3 days
Packaging Details standard
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Mounting Type Through Hole
Vgs (Max) ±20V
Operating Temperature -55°C ~ 175°C (TJ)
Detailed Product Description
FDP045N10A-F102 MOSFET Power Electronics TO-220-3 High Current Applications N-Channel

 

 

 

 

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-220-3
Package / Case

 

 

 

 

FDP045N10A-F102 is a high-voltage, high-speed power MOSFET transistor in a TO-220-3 package. This device is designed for switching applications in switching power supplies, motor control, and other power switching applications. It has a drain-source voltage rating of 100V, a maximum drain current of 45A, and a maximum power dissipation of 75W.

 

 

 

It offers a fast switching speed of 10ns, a low gate-source capacitance of 6.5pF, and a low on-resistance of 0.0045ohm. This device is designed for low gate-charge and reverse body diode protection to enhance the switching performance. It is RoHS compliant, making it an ideal choice for power electronics applications.

 

 

 

 

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