NTLJF3117PT1G MOSFET Power Electronics High Performance 6-WDFN Maximum Efficiency Reliability

NTLJF3117PT1G MOSFET Power Electronics High Performance 6-WDFN Maximum Efficiency Reliability

The NTLJF3117PT1G is a P-channel enhancement mode MOSFET manufactured by ON Semiconductor. It is housed in a 6-WDFN package and features a low on-state resistance, low gate charge and high-speed switching. It is suitable for a wide range of applications, such as switching and linear applications. With a maximum drain to source voltage of -20V, the device has a drain current of -1.7A and a maximum power dissipation of 0.55 W. It is designed to operate at a junction temperature of 125°C and a maximum operating temperature of +150°C. The NTLJF3117PT1G is an excellent choice for applications that require high efficiency and reliable performance.

The NTLJF3117PT1G is a 100V N-Channel MOSFET with low gate charge and low on-state resistance. This device is designed for power switching applications in consumer, computer, industrial, telecom and automotive applications. This MOSFET operates from -55°C to 125°C junction temperature and is housed in a 6-WDFN package.

The NTLJF3117PT1G features fast switching speed and low gate threshold voltage. This device also has a low drain-source charge to reduce switching losses and improve efficiency. The NTLJF3117PT1G is also RoHS compliant and has built-in ESD protection. This MOSFET can handle a wide range of drain-source voltage and drain current. The NTLJF3117PT1G is ideal for DC-DC converters, load switches, motor control, LED lighting, and automotive applications.

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