China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

Brand Name onsemi
Model Number FDN359BN
Place of Origin original
Minimum Order Quantity 1
Price Negotiable
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 999999
Delivery Time 1 - 3 days
Packaging Details standard
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Mounting Type Surface Mount
Vgs (Max) ±20V
Operating Temperature -55°C ~ 150°C (TJ)
Detailed Product Description

FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

 

 

 

 

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
46mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3
Package / Case

 

 

 

 

The FDN359BN is an N-channel enhancement mode power MOSFET, designed for high-voltage switching applications. It has an integrated gate-source voltage (VGS) of -20V, a drain-source voltage (VDS) of 200V, and a continuous drain current (ID) of -3A. It is housed in a TO-236-3 package and features a fast switching speed and low on-state resistance. The MOSFET also has a very low input capacitance and output capacitance, making it ideal for high frequency applications. Additionally, the device has a low threshold voltage, making it suitable for switching applications. The FDN359BN is ideal for use in DC-DC converters, motor controls, and power inverters.

 

 

 

 

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