NTR4101PT1G MOSFET Power Electronics Transistor TO-236-3 Package Enhancement Mode

NTR4101PT1G MOSFET Power Electronics Transistor TO-236-3 Package Enhancement Mode

The NTR4101PT1G is a high-performance enhancement mode Power MOSFET with a low on-resistance of 0.16 Ohm. It is an ideal choice for applications in which low voltage and low on-resistance are key performance parameters. With a maximum drain source voltage of 60V, it is suitable for a variety of applications such as DC-DC converters and high-speed switching. The TO-236-3 package provides a low profile solution for space-constrained designs. The NTR4101PT1G also features fast switching speeds, low gate charge and low gate-to-drain capacitance, making it an excellent choice for high-speed switching applications. The NTR4101PT1G is designed and tested to meet the specifications of the international standard JEDEC and offers reliable operation in the harshest environments.

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