2N7002ET1G MOSFET Power Electronics TO-236-3 Transistor High Performance Applications

2N7002ET1G MOSFET Power Electronics TO-236-3 Transistor High Performance Applications

The 2N7002ET1G N-Channel MOSFET power electronics is a small-signal transistor designed for low-voltage switching applications. It is housed in a TO-236-3 package, making it ideal for use in small, tight spaces.The 2N7002ET1G is capable of operating at a maximum voltage of 30 V and a maximum drain current of 200 mA. It has a low on-resistance of 0.7 Ω and a low gate threshold voltage of 3.2 V. This MOSFET provides excellent performance and reliability.

The 2N7002ET1G has a high switching speed of 2.5 ns and a low thermal resistance of 0.25 °C/W. It is also built with a high input impedance which helps reduce power consumption. This MOSFET is suitable for use in a variety of low-voltage switching applications such as digital logic, power supplies, and motor control.The 2N7002ET1G is RoHS compliant and has an operating temperature range of -55 °C to +125 °C. It is also available in tape and reel packaging for easy handling and storage. This MOSFET is a reliable and cost-effective solution for a variety of low-voltage switching applications.

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