DN3545N3-G MOSFET Power Electronics N-Channel High Speed Switching Low On Resistance

DN3545N3-G MOSFET Power Electronics N-Channel High Speed Switching Low On Resistance

Product Description:

The DN3545N3-G MOSFET Power Electronics from Diodes Incorporated is a perfect choice for high-side power switching applications. This device includes an integrated gate driver, as well as an internal body diode for reverse current protection. It supports a low gate-to-source voltage with a very low on-resistance of 3.5mΩ, making it ideal for applications requiring efficient power switching.

Product Parameters:

• Package: DPAK

• Maximum Drain Source Voltage: 35V
• Maximum Gate Source Voltage: ±20V
• Maximum Drain Current: 45A
• Drain Source On Resistance: 3.5mΩ
• Operating Temperature Range: -55°C to +150°C

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