AO3423 MOSFET Power Electronics - High Performance Low On-Resistance

AO3423 N-Channel Enhancement Mode MOSFET

The AO3423 is a N-Channel enhancement mode MOSFET designed for use in a wide range of applications. It is designed to provide excellent RDS(on) performance, high-frequency switching, and low gate charge.

Features:

• N-Channel enhancement mode
• Low on-resistance
• Low gate charge
• High-frequency switching
• Low threshold voltage
• RoHS compliant

Specifications:

• Drain Source Voltage (VDS): 30V
• Drain Current (ID): -3A
• Maximum Drain Source Voltage (VGS): -20V
• Maximum Gate Source Voltage (VGS): -8V
• Maximum Power Dissipation (PD): 2.8W
• Maximum Junction Temperature (TJ): 150°C
• Operating Temperature Range (TJ): -55°C to 150°C
• RDS(on): 8.5mΩ
• Gate Threshold Voltage (VGS(th)): 4V

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