SIHG20N50C-E3 High-Performance N-Channel MOSFET for Power Electronics Applications

Product Listing:

20N50C-E3 Silicon N-Channel MOSFET

Features:

• Low on-Resistance RDS(on)

• Low Gate Charge

• Low Threshold Voltage

• High Current Capability

• High Speed Switching

• High Reliability

• Avalanche Energy Rated

• ESD Rated

• RoHS Compliant

Specifications:

• Drain to Source Voltage (VDS): 500V

• Continuous Drain Current (ID): 20A

• On Resistance (RDSon): 4.7mohm

• Gate to Source Voltage (VGS): ±20V

• Power Dissipation (PD): 145W

• Operating and Storage Temperature: -55 to 150

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