IRFRC20TRPBF MOSFET: High Power and Efficiency for Your Power Electronics Projects

Product Listing:

Product Name: IRFRC20TRPBF MOSFET

Description: This MOSFET is a N-Channel power MOSFET developed using the advanced PowerMESH™ process technology. It offers low on-resistance and fast switching performance.

Parameters:

• Drain-Source Voltage: 100V
• Continuous Drain Current: 20A
• Drain-Source On-Resistance Rds(on): 0.008Ω
• Maximum Drain-Source On-State Resistance RDS(on): 0.012Ω
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Threshold Voltage: 2.2V
• Maximum Power Dissipation: 1.5W
• Operating Temperature: -55°C to 175°C

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