SQJ463EP-T1_GE3 MOSFET Power Electronics: High-Performance and Reliable Power Switching
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Product Listing: Product: SQJ463EP-T1_GE3 MOSFET Parameters: • Drain-Source Voltage (VDS): 30V • Drain Current (ID): 12A • RDS(on): 0.0099Ω • Gate Threshold Voltage (VGS): 2.0V • Power Dissipation (PD): 20W • Operating Temperature: -55°C to +150°C • Mounting Type: Surface Mount
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