IRF3808PBF MOSFET Power Electronics High Efficiency & Long-Lasting Switching Solutions

Product Listing:

IRF3808PBF N-Channel Power MOSFET

Features:

- Low On-Resistance

- Fast Switching

- High-Voltage Capability

- Low Gate Charge

- Low Output Capacitance

- ESD Protected

Parameters:

- Drain-Source Voltage (Vdss): 500 V

- Gate-Source Voltage (Vgs): ±20 V

- Drain Current (Id): 25 A

- Drain-Source On State Resistance (Rds): 0.0043 Ω

- Maximum Power Dissipation (Pd): 75 W

- Maximum Continuous Drain Current (Id): 25 A

- Maximum Junction Temperature (Tj): 175 °C

- Maximum Transient Thermal Impedance (Zth j-c): 1.2 °C/W

-Maximum Gate-Source Voltage (Vgs): ±20 V

- Maximum Drain-Source On State Resistance (Rds): 0.0043 Ω

- Maximum Operating Frequency (f): 7 MHz

Why buy from us >>> Fast / Safely / Conveniently

• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>

• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>

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• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.