IPW60R070C6 High-Performance MOSFET Power Electronics for Optimal Efficiency and Reliability

IPW60R070C6 High-Performance MOSFET Power Electronics for Optimal Efficiency and Reliability

Product Description:

The IPW60R070C6 is a N-Channel enhancement mode power MOSFET. This device is designed to withstand high energy in the avalanche and commutation modes. It is especially suited for high voltage, high speed switching applications.

Product Specifications:

• drain-source voltage: 60V
• drain current: 70A
• drain-source on-state resistance: 0.065Ω
• gate-source voltage: ±20V
• power dissipation: 270W
• operating temperature range: -55°C to 150°C
• storage temperature range: -55°C to 150°C

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