IRFB23N20DPBF MOSFET High-Performance Power Electronics For Maximum Efficiency And Reliability

Product Listing:

IRFB23N20DPBF MOSFET

Product Description:

The IRFB23N20DPBF is a N-channel MOSFET with a maximum drain-source voltage of 200V and a drain current of 23A. It is a standard MOSFET with an on-resistance of 0.023 Ohms and a maximum gate threshold voltage of 4V. The device has a continuous drain current of 23A and a maximum power dissipation of 172W. It is suitable for general purpose switching applications.

Features:

• Maximum Drain-Source Voltage: 200V
• Maximum Drain Current: 23A
• On-Resistance: 0.023 Ohms
• Maximum Gate Threshold Voltage: 4V
• Continuous Drain Current: 23A
• Maximum Power Dissipation: 172W
• Suitable for General Purpose Switching Applications

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