IPB108N15N3G High-Performance N Channel MOSFET for Power Electronics Applications

IPB108N15N3G High-Performance N Channel MOSFET for Power Electronics Applications

Product Description:

MOSFET IPB108N15N3G is a high-performance, advanced technology power MOSFET designed for use in switching applications. It features low on-state resistance, fast switching speed, and high-current capability.

Product Parameters:

• Drain-Source Voltage: 100V
• Drain Current (Continuous): 108A
• Drain Current (Pulsed): 180A
• Gate Threshold Voltage: 4V
• RDS(on): 0.0075Ω
• Maximum Power Dissipation: 535W
• Operating Temperature Range: -55°C to 150°C

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