IRFB4227PBF MOSFET High Performance High Power Power Electronics Solution

IRFB4227PBF MOSFET High Performance

High Power Power Electronics Solution

Description:

The IRFB4227PBF is a N-Channel MOSFET with a maximum drain source voltage of 200V. It has a drain source current of 8.5A, a gate threshold voltage of 4V, and a maximum power dissipation of 32W. This MOSFET is ideal for use in high-power applications such as motor control, lighting, and power management. The IRFB4227PBF is RoHS compliant and is manufactured in a TO-220 package.

Parameters:

• Maximum Drain Source Voltage: 200V
• Drain Source Current: 8.5A
• Gate Threshold Voltage: 4V
• Maximum Power Dissipation: 32W
• RoHS Compliant
• Package: TO-220

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