IPP040N06N3G High Power MOSFET Ideal for Power Electronics Applications

IPP040N06N3G High Power MOSFET Ideal for Power Electronics Applications

Parameters:

Voltage: 60V

Drain-Source On-Resistance: 0.044 Ohms

Drain Current: 40A

Power Dissipation: 44W

Threshold Voltage: 4V

Package Type: TO-220AB

Mounting Type: Through Hole

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