SI4488DY-T1-E3 MOSFET Power Electronics High Efficiency High Frequency High Quality Switching

SI4488DY-T1-E3 MOSFET Power Electronics High Efficiency High Frequency High Quality Switching

Product Description:

The SI4488DY-T1-E3 is a N-Channel Power MOSFET manufactured by Vishay. It has a drain-source voltage of 30V, a gate-source voltage of ±20V, a drain current of 61A, a drain-source on-state resistance of 0.312mΩ, and a maximum power dissipation of 85W. This MOSFET is ideal for high temperature and high voltage applications.

Features:

• N-Channel
• 30V Drain-Source Voltage
• ±20V Gate-Source Voltage
• 61A Drain Current
• 0.312mΩ Drain-Source On-State Resistance
• 85W Maximum Power Dissipation
• High Temperature and High Voltage Applications

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