IRF2805PBF MOSFET Power Electronics High-Performance High-Reliability Switching Solutions

Product Listing:

IRF2805PBF MOSFET Transistor

The IRF2805PBF MOSFET Transistor is a N-channel enhancement-mode Field-Effect Transistor that features a low on-resistance and a low gate-to-source threshold voltage. This device is typically used in switching applications such as motor control, relay drivers, and other applications that require high-current switching.

Key Features:

• N-channel enhancement-mode Field-Effect Transistor
• Low on-resistance
• Low gate-to-source threshold voltage
• High-current switching capability
• Operating temperature range -55°C to +150°C
• Maximum drain current: 55A
• Maximum drain-source voltage: 500V
• Maximum gate-source voltage: +/- 20V
• Maximum power dissipation: 153W

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