IRFP3703PBF MOSFET High Power Low On Resistance High Efficiency Power Electronics Solution

IRFP3703PBF MOSFET High Power

Low On Resistance High Efficiency Power Electronics Solution

This MOSFET is a high performance, low gate charge, and low on-resistance N-Channel MOSFET. It is optimized for low voltage applications and high switching speeds. It has an on-resistance of 0.033 ohms and a breakdown voltage of 500V. It can handle a maximum current of 44A and a maximum power of 230W. It is suitable for high frequency switching, DC-DC conversion, and power management applications. This MOSFET has an excellent thermal performance with a low thermal resistance of 1.2°C/W. It is RoHS compliant and is available in various packages.

Features:

• 100V Drain-Source Voltage (VDS)
• 200A Drain Current (ID)
• Fast Switching Speed
• Low On-Resistance (RDS(on))
• High-Side Switching Capability
• RoHS Compliant

Specifications:

• Drain-Source Voltage (VDS): 100V
• Drain Current (ID): 200A
• Gate-Source Voltage (VGS): ±20V
• On-State Resistance (RDS(on)): 0.001 Ohm
• Maximum Junction Temperature (Tj): 150°C
• Maximum Storage Temperature (Tstg): 150°C
• Package: TO-247
• Product Type: N-Channel MOSFET

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