IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications

IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications

IRFP2907PBF MOSFET

This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET is suitable for high power applications such as power switching, audio amplifiers, and motor control.

Parameters:
- Drain-Source Voltage: 100V
- Drain Current: 19A
- Switching Speed: Fast
- Gate-Source Threshold Voltage: Low
- Thermal Stability: Good
- Frequency Performance: Excellent
- Package: Robust

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