IRF1018EPBF MOSFET High Performance Power Electronics for Maximum Efficiency

IRF1018EPBF MOSFET High

Performance Power Electronics for Maximum Efficiency

Product Description:

The IRF1018EPBF is a N-channel enhancement mode MOSFET designed for high current switching applications. It is fabricated using advanced MOSFET technology that provides excellent switching performance and low on-resistance. It features a very low gate threshold voltage (Vgs(th)) for ease of driving and fast switching speeds. This device is rated for a drain current of up to 20A and a drain-source voltage of up to 100V. It also has a 175°C maximum junction temperature and a maximum power dissipation of 125W.

Features:

• Low On-Resistance RDS(on)
• Low Gate Charge Qg
• Low Threshold Voltage VGS(th)
• Fast Switching
• Lead Free Finish/RoHS Compliant

Specifications:

• Drain-Source Voltage VDS: 100V
• Continuous Drain Current ID: 8A
• Power Dissipation PD: 20W
• RDS(on) (Max) @VGS = 10V: 0.03ohm
• RDS(on) (Max) @VGS = 4.5V: 0.05ohm
• Threshold Voltage VGS(th): 2.0V
• Transistor Polarity: N Channel
• Transistor Case Style: TO-220AB
• Unit Weight: 0.014oz