IRF9321TRPBF High Performance MOSFET Power Electronics for Optimal Efficiency and Reliability

IRF9321TRPBF High Performance

MOSFET Power Electronics for Optimal Efficiency and Reliability

The IRF9321TRPBF MOSFET is a N-Channel Power MOSFET with a maximum drain-source voltage of 30V, a maximum drain current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast switching speed and low on-state resistance. This MOSFET is ideal for use in power management, motor control, and switching applications.

Product Parameters: 

• Drain-Source Voltage (Vdss): 100V 

• Continuous Drain Current (Id): 9.2A

• Rds On (max) @ Vgs: 0.065 Ohm 

• Input Capacitance (Ciss) @ Vds: 645pF 

• Gate-Source Voltage (Vgs): ±20V 

• Power Dissipation (Pd): 28W 

• Operating Temperature Range: -55°C to 175°C 

• Mounting Style: SMD/SMT 

• Package/Case: TO-220-3 

• Transistor Type: MOSFET N-Channel 

• Threshold Voltage (Vgs): 4.5V

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