IRF9310TRPBF MOSFET Power Electronics N-Channel Enhancement Mode MOSFET

Product Description:

1. N-channel MOSFET for high-power switching and linear operations

2. Maximum drain source voltage of 30V and a maximum current of 8A

3. Maximum Pulsed Drain Current of 30A

4. Low RDS(ON) of 0.069 Ohm

5. High-speed switching with a maximum turn-on time of 10ns

6. High-side and low-side switching capability

7. Logic level gate drive

8. AEC-Q101 qualified for automotive applications

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