IRF3710PBF MOSFET Power Electronics High Performance High Reliability Switching Device

IRF3710PBF MOSFET Power

Electronics High Performance High Reliability Switching Device

Description:

The IRF3710PBF is a high voltage, high speed power MOSFET. It is a N-Channel enhancement mode device with a low gate charge for high efficiency, low power loss and fast switching.

Specifications:

- Drain-Source Voltage: 100V
- Drain Current: 34A
- Gate Threshold Voltage: 4V
- RDS(on): 0.042 Ohm
- Input Capacitance: 400pF
- Power Dissipation: 4.2W
- Operating Temperature: -55°C to 175°C
- Package/Case: TO-220AB

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