MOSFET Power Electronics SI2347DS-T1-BE3 High Performance Power Switching
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MOSFET Power Electronics SI2347DS-T1-BE3 High Performance Power Switching
Product Listing:
- Low On-Resistance
- Gate-Source Voltage (Vgss): +/-20V - Drain Current (Id): 11A - Power Dissipation: 15W - On-Resistance (Rds): 0.0046 Ohm - Input Capacitance (Ciss): 590pF - Gate Charge (Qg): 11.4nC - Operating Temperature: -55°C to 150°C
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Offer business, service, resourcing and information for our global
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