DDR3 SDRAM uses a double data rate architecture to achieve
high-speed operation. The double data rate architecture is an
8n-prefetch architecture with an interface designed to transfer two
data words per clock cycle at the I/O pins.
A single read or write operation for the DDR3 SDRAM effectively
consists of a single 8n-bit-wide, four-clock cycle data transfer
at the internal DRAM core and eight corresponding n-bit-wide, one
half-clock-cycle data transfers at the I/O pins. The
differential data strobe (DQS, DQS#) is transmitted externally,
along with data, for use in data capture at the DDR3 SDRAM input
receiver. DQS is center-aligned with data for WRITEs.
PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P
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Detailed Product Description
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Merrillchip Hot sale IC chips IC DRAM 4GBIT PARALLEL Integrated circuit Flash memory EEPROM DDR EMMC MT41K256M16TW-107 I MT41K256M16TW-107 IT:P
FAQQ1:About the quotation of IC BOM? A1:The company has the procurement channels of original integrated
circuit manufacturers at home and abroad and a professional product
solution analysis team to select high-quality, low-cost electronic
components for customers. Q2:Quotation for PCB and PCBA solutions? A2: The company's professional team will analyze the application
range of the PCB and PCBA solutions provided by the customer and
the parameter requirements of each electronic component, and
ultimately provide customers with high-quality and low-cost
quotation solutions. Q3:About chip design to finished product? A3: We have a complete set of wafer design, wafer production, wafer
testing, IC packaging and integration,and IC product inspection
services. Q4:Does our company have a minimum order quantity (MOQ)
requirement? A4: No, we do not have MOQ requirement, we can support your
projects starting from prototypes to mass productions. Q5:How to ensure that customer information is not leaked? A5: We are willing to sign NDA effect by customer side local law
and promising to keep customers data in high confidential level. |
| Product Tags: Merrillchip Micron ISSI Samsung Micron ISSI Samsung DRAM 4GBIT 4GBIT mt41k256m16tw 107 it p |
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