MT3S113TU,LF

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MT3S113TU,LF

Voltage - Collector Emitter Breakdown (Max) :	5.3V
Product Category :	RF Bipolar Transistors
Gain :	12.5dB
Transistor Type :	NPN
Minimum Quantity :	3000
Supplier Device Package :	UFM
Noise Figure (dB Typ @ f) :	1.45dB @ 1GHz
Part Status :	Active
Current - Collector (Ic) (Max) :	100mA
Power - Max :	900mW
Packaging :	Tape & Reel (TR)
Frequency - Transition :	11.2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce :	200 @ 30mA, 5V
Operating Temperature :	150°C (TJ)
Package / Case :	3-SMD, Flat Leads
Mounting Type :	Surface Mount
Series :	-
Manufacturer :	Toshiba Semiconductor
Description	RF SIGE HETEROJUNCTION BIPOLAR N

Detailed Product Description

The MT3S113TU,LF,from Toshiba Semiconductor,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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