BLA1011S-200R,112

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BLA1011S-200R,112

Transistor Polarity :	N-Channel
Technology :	Si
Product Category :	RF MOSFET Transistors
Mounting Style :	SMD/SMT
Gain :	13 dB
Output Power :	200 W
Package / Case :	SOT-502B-3
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	75 V
Packaging :	Tube
Id - Continuous Drain Current :	150 mA
Rds On - Drain-Source Resistance :	60 mOhms
Manufacturer :	NXP Semiconductors
Description	RF MOSFET Transistors TRANS LDMOS NCH 75V

Detailed Product Description

The BLA1011S-200R,112,from NXP Semiconductors,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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