PTFA092201F V4

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PTFA092201F V4

Transistor Polarity :	N-Channel
Technology :	Si
Product Category :	RF MOSFET Transistors
Mounting Style :	SMD/SMT
Gain :	18.5 dB
Output Power :	55 W
Package / Case :	H-37260-2
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	65 V
Packaging :	Tray
Id - Continuous Drain Current :	1.85 A
Rds On - Drain-Source Resistance :	0.04 Ohms at 10 V
Manufacturer :	Infineon Technologies
Description	RF MOSFET Transistors RFP-LDMOS GOLDMOS 8

Detailed Product Description

The PTFA092201F V4,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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