PTFB182503EL

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PTFB182503EL

Technology :	Si
Product Category :	RF MOSFET Transistors
Package / Case :	H-33288-6
Maximum Operating Temperature :	+ 125 C
Vds - Drain-Source Breakdown Voltage :	65 V
Packaging :	Tray
Id - Continuous Drain Current :	1.85 A
Rds On - Drain-Source Resistance :	30 mOhms
Manufacturer :	Infineon Technologies
Description	RF MOSFET Transistors RFP-LDMOS 9

Detailed Product Description

The PTFB182503EL,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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