PTFA192001E V4 R250

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PTFA192001E V4 R250

Transistor Polarity :	N-Channel
Technology :	Si
Product Category :	RF MOSFET Transistors
Mounting Style :	SMD/SMT
Gain :	17 dB
Output Power :	100 W
Package / Case :	H-36248-2
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	65 V
Packaging :	Reel
Id - Continuous Drain Current :	900 mA
Rds On - Drain-Source Resistance :	50 mOhms
Manufacturer :	Infineon Technologies
Description	RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 MHz

Detailed Product Description

The PTFA192001E V4 R250,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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