BG 3130R H6327

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BG 3130R H6327

Transistor Polarity :	N-Channel
Technology :	Si
Product Category :	RF MOSFET Transistors
Mounting Style :	SMD/SMT
Gain :	24 dB
Package / Case :	SOT-363
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	12 V
Packaging :	Reel
Id - Continuous Drain Current :	25 mA
Manufacturer :	Infineon Technologies
Description	RF MOSFET Transistors RF MOSFETS

Detailed Product Description

The BG 3130R H6327,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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