NPTB00004A

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Beijing Silk Road Enterprise Management Services Co.,LTD

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NPTB00004A

Transistor Polarity :	N-Channel
Technology :	GaN Si
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	16 dB
Transistor Type :	HEMT
Pd - Power Dissipation :	11.6 W
Package / Case :	SOIC
Maximum Operating Temperature :	+ 200 C
Vds - Drain-Source Breakdown Voltage :	100 V
Packaging :	Tray
Id - Continuous Drain Current :	2 mA
Vgs - Gate-Source Breakdown Voltage :	3 mA
Manufacturer :	MACOM
Description	RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT

Detailed Product Description

The NPTB00004A,from MACOM,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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