TGF2160

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TGF2160

Vgs - Gate-Source Breakdown Voltage :	- 7 V
Technology :	GaAs
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	10.4 dB
Transistor Type :	pHEMT
Pd - Power Dissipation :	5.6 W
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	12 V
Packaging :	Tray
Id - Continuous Drain Current :	517 mA
Manufacturer :	Qorvo
Description	RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE

Detailed Product Description

The TGF2160,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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