NPT2021

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Beijing Silk Road Enterprise Management Services Co.,LTD

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NPT2021

Transistor Polarity :	N-Channel
Technology :	GaN Si
Product Category :	RF JFET Transistors
Mounting Style :	Screw
Gain :	14.2 dB
Transistor Type :	HEMT
Output Power :	45 W
Package / Case :	TO-272
Maximum Operating Temperature :	+ 85 C
Vds - Drain-Source Breakdown Voltage :	160 V
Packaging :	Tray
Id - Continuous Drain Current :	14 mA
Vgs - Gate-Source Breakdown Voltage :	3 V
Manufacturer :	MACOM
Description	RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT

Detailed Product Description

The NPT2021,from MACOM,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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