QPD3601

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QPD3601

Transistor Polarity :	N-Channel
Technology :	GaN SiC
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	22 dB
Transistor Type :	HEMT
Output Power :	180 W
Package / Case :	NI400-2
Maximum Operating Temperature :	+ 85 C
Vds - Drain-Source Breakdown Voltage :	50 V
Packaging :	Waffle
Maximum Drain Gate Voltage :	55 V
Id - Continuous Drain Current :	360 mA
Pd - Power Dissipation :	60.9 W
Manufacturer :	Qorvo
Description	RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN

Detailed Product Description

The QPD3601,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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