TGF2018

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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TGF2018

Vgs - Gate-Source Breakdown Voltage :	- 15 V
Technology :	GaAs
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	14 dB
Transistor Type :	pHEMT
Pd - Power Dissipation :	0.64 W
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	8 V
Packaging :	Gel Pack
Maximum Drain Gate Voltage :	12 V
Id - Continuous Drain Current :	58 mA
Manufacturer :	Qorvo
Description	RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm

Detailed Product Description

The TGF2018,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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