TGF2955

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TGF2955

Transistor Polarity :	N-Channel
Technology :	GaN SiC
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	19.2 dB
Transistor Type :	HEMT
Output Power :	46.4 dBm
Package / Case :	Die
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	32 V
Packaging :	Waffle
Maximum Drain Gate Voltage :	100 V
Id - Continuous Drain Current :	2.5 A
Pd - Power Dissipation :	41 W
Manufacturer :	Qorvo
Description	RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm

Detailed Product Description

The TGF2955,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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