CGHV59350F

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CGHV59350F

Vgs - Gate-Source Breakdown Voltage :	- 10 V, 2 V
Technology :	GaN
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	11 dB
Transistor Type :	HEMT
Output Power :	450 W
Maximum Operating Temperature :	+ 85 C
Packaging :	Tray
Vds - Drain-Source Breakdown Voltage :	125 V
Manufacturer :	Wolfspeed / Cree
Description	RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt

Detailed Product Description

The CGHV59350F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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