ATF-511P8-TR2

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ATF-511P8-TR2

Vgs - Gate-Source Breakdown Voltage :	- 5 V to 1 V
Technology :	GaAs
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	14.8 dB
Transistor Type :	EpHEMT
Pd - Power Dissipation :	3 W
Package / Case :	LPCC-8
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	7 V
Packaging :	Reel
Maximum Drain Gate Voltage :	- 5 V to + 1 V
Id - Continuous Drain Current :	1 A
Manufacturer :	Avago / Broadcom
Description	RF JFET Transistors Transistor GaAs High Linearity

Detailed Product Description

The ATF-511P8-TR2,from Avago / Broadcom,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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